Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

SiC direct bonding using O(2) plasma activation is investigated in this work. SiC substrate and n(−) SiC epitaxy growth layer are activated with an optimized duration of 60s and power of the oxygen ion beam source at 20 W. After O(2) plasma activation, both the SiC substrate and n(−) SiC epitaxy gro...

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Detalles Bibliográficos
Autores principales: Zhang, Wenting, Zhang, Caorui, Wu, Junmin, Yang, Fei, An, Yunlai, Hu, Fangjing, Fan, Ji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8703671/
https://www.ncbi.nlm.nih.gov/pubmed/34945425
http://dx.doi.org/10.3390/mi12121575

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8703671/
https://www.ncbi.nlm.nih.gov/pubmed/34945425
http://dx.doi.org/10.3390/mi12121575

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