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Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications
SiC direct bonding using O(2) plasma activation is investigated in this work. SiC substrate and n(−) SiC epitaxy growth layer are activated with an optimized duration of 60s and power of the oxygen ion beam source at 20 W. After O(2) plasma activation, both the SiC substrate and n(−) SiC epitaxy gro...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8703671/ https://www.ncbi.nlm.nih.gov/pubmed/34945425 http://dx.doi.org/10.3390/mi12121575 |