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Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal...

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Autores principales: Lei, Po-Hsun, Chen, Jia-Jan, Song, Ming-Hsiu, Zhan, Yuan-Yu, Jiang, Zong-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8703904/
https://www.ncbi.nlm.nih.gov/pubmed/34945439
http://dx.doi.org/10.3390/mi12121590
_version_ 1784621577864740864
author Lei, Po-Hsun
Chen, Jia-Jan
Song, Ming-Hsiu
Zhan, Yuan-Yu
Jiang, Zong-Lin
author_facet Lei, Po-Hsun
Chen, Jia-Jan
Song, Ming-Hsiu
Zhan, Yuan-Yu
Jiang, Zong-Lin
author_sort Lei, Po-Hsun
collection PubMed
description We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal–organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium–tin–oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE).
format Online
Article
Text
id pubmed-8703904
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-87039042021-12-25 Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide Lei, Po-Hsun Chen, Jia-Jan Song, Ming-Hsiu Zhan, Yuan-Yu Jiang, Zong-Lin Micromachines (Basel) Article We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal–organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium–tin–oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE). MDPI 2021-12-20 /pmc/articles/PMC8703904/ /pubmed/34945439 http://dx.doi.org/10.3390/mi12121590 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lei, Po-Hsun
Chen, Jia-Jan
Song, Ming-Hsiu
Zhan, Yuan-Yu
Jiang, Zong-Lin
Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title_full Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title_fullStr Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title_full_unstemmed Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title_short Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide
title_sort using modified-intake plasma-enhanced metal–organic chemical vapor deposition system to grow gallium doped zinc oxide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8703904/
https://www.ncbi.nlm.nih.gov/pubmed/34945439
http://dx.doi.org/10.3390/mi12121590
work_keys_str_mv AT leipohsun usingmodifiedintakeplasmaenhancedmetalorganicchemicalvapordepositionsystemtogrowgalliumdopedzincoxide
AT chenjiajan usingmodifiedintakeplasmaenhancedmetalorganicchemicalvapordepositionsystemtogrowgalliumdopedzincoxide
AT songminghsiu usingmodifiedintakeplasmaenhancedmetalorganicchemicalvapordepositionsystemtogrowgalliumdopedzincoxide
AT zhanyuanyu usingmodifiedintakeplasmaenhancedmetalorganicchemicalvapordepositionsystemtogrowgalliumdopedzincoxide
AT jiangzonglin usingmodifiedintakeplasmaenhancedmetalorganicchemicalvapordepositionsystemtogrowgalliumdopedzincoxide