Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rap...

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Detalles Bibliográficos
Autores principales: Wang, Qi, Zhou, Kehong, Zhao, Shuai, Yang, Wen, Zhang, Hongsheng, Yan, Wensheng, Huang, Yi, Yuan, Guodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704282/
https://www.ncbi.nlm.nih.gov/pubmed/34947528
http://dx.doi.org/10.3390/nano11123179

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704282/
https://www.ncbi.nlm.nih.gov/pubmed/34947528
http://dx.doi.org/10.3390/nano11123179

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