Cargando…

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rap...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wang, Qi, Zhou, Kehong, Zhao, Shuai, Yang, Wen, Zhang, Hongsheng, Yan, Wensheng, Huang, Yi, Yuan, Guodong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704282/ https://www.ncbi.nlm.nih.gov/pubmed/34947528 http://dx.doi.org/10.3390/nano11123179

Ejemplares similares

GaN nanowires prepared by Cu-assisted photoelectron-chemical etching
por: Wang, Qi, et al.
Publicado: (2023)

Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
por: Asoh, Hidetaka, et al.
Publicado: (2017)

Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching
por: Asoh, Hidetaka, et al.
Publicado: (2012)

Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
por: Nur’aini, Anafi, et al.
Publicado: (2022)

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
por: Ceponis, Tomas, et al.
Publicado: (2023)

Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
por: Coulon, Pierre-Marie, et al.
Publicado: (2020)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
por: He, Wei, et al.
Publicado: (2022)

Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures
por: Akan, Rabia, et al.
Publicado: (2021)

Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching
por: Kato, Shinya, et al.
Publicado: (2013)

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
por: Li, Yuan, et al.
Publicado: (2022)

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching
por: Chen, Lung-Chien, et al.
Publicado: (2017)

Nanoscale anisotropic plastic deformation in single crystal GaN
por: Huang, Jun, et al.
Publicado: (2012)

Anisotropic properties of pipe-GaN distributed Bragg reflectors
por: Wu, Chia-Jung, et al.
Publicado: (2020)

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
por: Wei, Xiongliang, et al.
Publicado: (2023)

Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching
por: Liu, Ruiyuan, et al.
Publicado: (2013)

Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
por: Asoh, Hidetaka, et al.
Publicado: (2013)

Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
por: Qian, Yang, et al.
Publicado: (2020)

Enhanced Surface Properties of Light-Trapping Si Nanowires Using Synergetic Effects of Metal-Assisted and Anisotropic Chemical Etchings
por: Jeong, Youngsoon, et al.
Publicado: (2019)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications
por: Um, Han-Don, et al.
Publicado: (2015)

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode
por: Zhang, Anbang, et al.
Publicado: (2019)

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
por: Mukherjee, Kalparupa, et al.
Publicado: (2020)

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode
por: Lee, Sung-Hoon, et al.
Publicado: (2023)

A high-precision, template-assisted, anisotropic wet etching method for fabricating perovskite microstructure arrays
por: Hu, Xue-fang, et al.
Publicado: (2020)

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
por: Wan, Hui, et al.
Publicado: (2019)

Ultra-Narrow Metallic Nano-Trenches Realized by Wet Etching and Critical Point Drying
por: Jeong, Jeeyoon, et al.
Publicado: (2021)

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
por: Zhang, Penghao, et al.
Publicado: (2022)

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
por: Sheng, Shanshan, et al.
Publicado: (2022)

Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching With Ammonium Fluoride
por: Gonchar, Kirill A., et al.
Publicado: (2019)

Large-Scale Synthesis of Highly Uniform Silicon Nanowire Arrays Using Metal-Assisted Chemical Etching
por: Wendisch, Fedja J., et al.
Publicado: (2020)

Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
por: Mohanty, Srikant Kumar, et al.
Publicado: (2019)

Silicon Conical Structures by Metal Assisted Chemical Etching
por: Pérez-Díaz, Oscar, et al.
Publicado: (2020)

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling
por: Lova, Paola, et al.
Publicado: (2020)

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
por: Jang, Dongsoo, et al.
Publicado: (2018)

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid
por: Shushanian, Artem, et al.
Publicado: (2022)

Catalytic activity of noble metals for metal-assisted chemical etching of silicon
por: Yae, Shinji, et al.
Publicado: (2012)

Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect
por: Osminkina, Liubov A, et al.
Publicado: (2012)

Anisotropic Strain Relaxation in Semipolar [Formula: see text] InGaN/GaN Superlattice Relaxed Templates
por: Li, Wenlong, et al.
Publicado: (2022)

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
por: Mukherjee, Kalparupa, et al.
Publicado: (2021)

Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching
por: Vinzons, Lester U., et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_94k3mqut0t3lj9puc9t4k22m4u