A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transist...

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Detalles Bibliográficos
Autores principales: Balani, Warsha, Sarvagya, Mrinal, Ali, Tanweer, Samasgikar, Ajit, Kumar, Pradeep, Pathan, Sameena, Pai M M, Manohara
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704747/
https://www.ncbi.nlm.nih.gov/pubmed/34945370
http://dx.doi.org/10.3390/mi12121520

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704747/
https://www.ncbi.nlm.nih.gov/pubmed/34945370
http://dx.doi.org/10.3390/mi12121520

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