Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To...

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Detalles Bibliográficos
Autores principales: Grant, Joshua, Abernathy, Grey, Olorunsola, Oluwatobi, Ojo, Solomon, Amoah, Sylvester, Wanglia, Emmanuel, Saha, Samir K., Sabbar, Abbas, Du, Wei, Alher, Murtadha, Li, Bao-Hua, Yu, Shui-Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705099/
https://www.ncbi.nlm.nih.gov/pubmed/34947234
http://dx.doi.org/10.3390/ma14247637

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705099/
https://www.ncbi.nlm.nih.gov/pubmed/34947234
http://dx.doi.org/10.3390/ma14247637

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