Cargando…

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To...

Descripción completa

Detalles Bibliográficos
Autores principales:	Grant, Joshua, Abernathy, Grey, Olorunsola, Oluwatobi, Ojo, Solomon, Amoah, Sylvester, Wanglia, Emmanuel, Saha, Samir K., Sabbar, Abbas, Du, Wei, Alher, Murtadha, Li, Bao-Hua, Yu, Shui-Qing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705099/ https://www.ncbi.nlm.nih.gov/pubmed/34947234 http://dx.doi.org/10.3390/ma14247637

Ejemplares similares

“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
por: Chang, Guo-En, et al.
Publicado: (2023)

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
por: von den Driesch, Nils, et al.
Publicado: (2018)

Impact of tensile strain on low Sn content GeSn lasing
por: Rainko, Denis, et al.
Publicado: (2019)

Structural Property Study for GeSn Thin Films
por: Zhang, Liyao, et al.
Publicado: (2020)

Photoelectrical properties of graphene/doped GeSn vertical heterostructures
por: Lv, Yanhui, et al.
Publicado: (2020)

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
por: Dou, Wei, et al.
Publicado: (2018)

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth
por: Liu, Zhi, et al.
Publicado: (2016)

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
por: Nawwar, Mohamed A., et al.
Publicado: (2022)

Growth and applications of GeSn-related group-IV semiconductor materials
por: Zaima, Shigeaki, et al.
Publicado: (2015)

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
por: Miao, Yuanhao, et al.
Publicado: (2021)

Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
por: Yen, Te Jui, et al.
Publicado: (2022)

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications
por: Kong, Zhenzhen, et al.
Publicado: (2022)

Dark Current Analysis on GeSn p-i-n Photodetectors
por: Ghosh, Soumava, et al.
Publicado: (2023)

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
por: Rainko, Denis, et al.
Publicado: (2018)

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
por: Mączko, H. S., et al.
Publicado: (2016)

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
por: Mączko, Herbert S., et al.
Publicado: (2019)

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications
por: Lin, Guangyang, et al.
Publicado: (2023)

Short-wave infrared cavity resonances in a single GeSn nanowire
por: Kim, Youngmin, et al.
Publicado: (2023)

Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
por: Huang, Zhong-Mei, et al.
Publicado: (2016)

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
por: Miao, Yuanhao, et al.
Publicado: (2023)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
por: Al-Saigh, Reem, et al.
Publicado: (2018)

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
por: Baira, Mourad, et al.
Publicado: (2019)

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications
por: Ghosh, Soumava, et al.
Publicado: (2020)

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
por: Ghosh, Soumava, et al.
Publicado: (2022)

Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors
por: Chuang, Ricky Wenkuei, et al.
Publicado: (2022)

Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
por: Abernathy, Grey, et al.
Publicado: (2023)

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application
por: Yang, Jiayin, et al.
Publicado: (2019)

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
por: Baira, Mourad, et al.
Publicado: (2019)

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn
por: Wang, Nan, et al.
Publicado: (2020)

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering
por: Kim, Youngmin, et al.
Publicado: (2023)

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes
por: Uchida, Giichiro, et al.
Publicado: (2022)

Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
por: Nawwar, Mohamed A., et al.
Publicado: (2023)

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods
por: Zhu, Guangjian, et al.
Publicado: (2020)

Correction: Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
por: Nawwar, Mohamed A., et al.
Publicado: (2023)

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
por: Chang, Chiao, et al.
Publicado: (2022)

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
por: Kim, Youngmin, et al.
Publicado: (2023)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Enthalpies of mixing of liquid systems for lead free soldering: Co–Sb–Sn
por: Elmahfoudi, A., et al.
Publicado: (2012)

Enthalpy of mixing of liquid systems for lead free soldering: Ni–Sb–Sn system
por: Elmahfoudi, A., et al.
Publicado: (2012)

Ge(1−x)Sn(x) alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration
por: Eales, Timothy D., et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_vqast00urqv9ekmab6od5nj6l9