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Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process
In this paper, guidelines for the optimization of piezoelectrical micromachined ultrasound transducers (PMUTs) monolithically integrated over a CMOS technology are developed. Higher acoustic pressure is produced by PMUTs with a thin layer of AlN piezoelectrical material and Si(3)N(4) as a passive la...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705788/ https://www.ncbi.nlm.nih.gov/pubmed/34960541 http://dx.doi.org/10.3390/s21248447 |
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author | Ledesma, Eyglis Zamora, Ivan Uranga, Arantxa Torres, Francesc Barniol, Núria |
author_facet | Ledesma, Eyglis Zamora, Ivan Uranga, Arantxa Torres, Francesc Barniol, Núria |
author_sort | Ledesma, Eyglis |
collection | PubMed |
description | In this paper, guidelines for the optimization of piezoelectrical micromachined ultrasound transducers (PMUTs) monolithically integrated over a CMOS technology are developed. Higher acoustic pressure is produced by PMUTs with a thin layer of AlN piezoelectrical material and Si(3)N(4) as a passive layer, as is studied here with finite element modeling (FEM) simulations and experimental characterization. Due to the thin layers used, parameters such as residual stress become relevant as they produce a buckled structure. It has been reported that the buckling of the membrane due to residual stress, in general, reduces the coupling factor and consequently degrades the efficiency of the acoustic pressure production. In this paper, we show that this buckling can be beneficial and that the fabricated PMUTs exhibit enhanced performance depending on the placement of the electrodes. This behavior was demonstrated experimentally and through FEM. The acoustic characterization of the fabricated PMUTs shows the enhancement of the PMUT performance as a transmitter (with 5 kPa V(−1) surface pressure for a single PMUT) and as a receiver (12.5 V MPa(−1)) in comparison with previously reported devices using the same MEMS-on-CMOS technology as well as state-of-the-art devices. |
format | Online Article Text |
id | pubmed-8705788 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-87057882021-12-25 Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process Ledesma, Eyglis Zamora, Ivan Uranga, Arantxa Torres, Francesc Barniol, Núria Sensors (Basel) Article In this paper, guidelines for the optimization of piezoelectrical micromachined ultrasound transducers (PMUTs) monolithically integrated over a CMOS technology are developed. Higher acoustic pressure is produced by PMUTs with a thin layer of AlN piezoelectrical material and Si(3)N(4) as a passive layer, as is studied here with finite element modeling (FEM) simulations and experimental characterization. Due to the thin layers used, parameters such as residual stress become relevant as they produce a buckled structure. It has been reported that the buckling of the membrane due to residual stress, in general, reduces the coupling factor and consequently degrades the efficiency of the acoustic pressure production. In this paper, we show that this buckling can be beneficial and that the fabricated PMUTs exhibit enhanced performance depending on the placement of the electrodes. This behavior was demonstrated experimentally and through FEM. The acoustic characterization of the fabricated PMUTs shows the enhancement of the PMUT performance as a transmitter (with 5 kPa V(−1) surface pressure for a single PMUT) and as a receiver (12.5 V MPa(−1)) in comparison with previously reported devices using the same MEMS-on-CMOS technology as well as state-of-the-art devices. MDPI 2021-12-17 /pmc/articles/PMC8705788/ /pubmed/34960541 http://dx.doi.org/10.3390/s21248447 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Ledesma, Eyglis Zamora, Ivan Uranga, Arantxa Torres, Francesc Barniol, Núria Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title | Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title_full | Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title_fullStr | Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title_full_unstemmed | Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title_short | Enhancing AlN PMUTs’ Acoustic Responsivity within a MEMS-on-CMOS Process |
title_sort | enhancing aln pmuts’ acoustic responsivity within a mems-on-cmos process |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705788/ https://www.ncbi.nlm.nih.gov/pubmed/34960541 http://dx.doi.org/10.3390/s21248447 |
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