An Empirical Modeling of Gate Voltage-Dependent Behaviors of Amorphous Oxide Semiconductor Thin-Film Transistors including Consideration of Contact Resistance and Disorder Effects at Room Temperature

In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the measured transfer characteristics of a pair of TFTs wh...

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Detalles Bibliográficos
Autor principal: Lee, Sungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706016/
https://www.ncbi.nlm.nih.gov/pubmed/34940455
http://dx.doi.org/10.3390/membranes11120954

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706016/
https://www.ncbi.nlm.nih.gov/pubmed/34940455
http://dx.doi.org/10.3390/membranes11120954

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