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Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t(...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706019/ https://www.ncbi.nlm.nih.gov/pubmed/34940430 http://dx.doi.org/10.3390/membranes11120929 |