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Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t(...

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Detalles Bibliográficos
Autores principales:	Li, Qi, Dong, Junchen, Han, Dedong, Wang, Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706019/ https://www.ncbi.nlm.nih.gov/pubmed/34940430 http://dx.doi.org/10.3390/membranes11120929

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