Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices

Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO(2)/Al(2)O(3) bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the conductivity of intermediate resistance states on the writing vo...

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Detalles Bibliográficos
Autores principales: Andreeva, Natalia, Mazing, Dmitriy, Romanov, Alexander, Gerasimova, Marina, Chigirev, Dmitriy, Luchinin, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706226/
https://www.ncbi.nlm.nih.gov/pubmed/34945416
http://dx.doi.org/10.3390/mi12121567

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706226/
https://www.ncbi.nlm.nih.gov/pubmed/34945416
http://dx.doi.org/10.3390/mi12121567

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