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Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices
Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO(2)/Al(2)O(3) bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the conductivity of intermediate resistance states on the writing vo...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706226/ https://www.ncbi.nlm.nih.gov/pubmed/34945416 http://dx.doi.org/10.3390/mi12121567 |