Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Methyltrichlorosilane (CH(3)SiCl(3), MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, wh...

Descripción completa

Detalles Bibliográficos
Autores principales: Song, Botao, Gao, Bing, Han, Pengfei, Yu, Yue, Tang, Xia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706549/
https://www.ncbi.nlm.nih.gov/pubmed/34947132
http://dx.doi.org/10.3390/ma14247532

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706549/
https://www.ncbi.nlm.nih.gov/pubmed/34947132
http://dx.doi.org/10.3390/ma14247532

Ejemplares similares