Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance...

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Detalles Bibliográficos
Autor principal: Kim, Sang-Kon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706712/
https://www.ncbi.nlm.nih.gov/pubmed/34945342
http://dx.doi.org/10.3390/mi12121493

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706712/
https://www.ncbi.nlm.nih.gov/pubmed/34945342
http://dx.doi.org/10.3390/mi12121493

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