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Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance...

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Detalles Bibliográficos
Autor principal:	Kim, Sang-Kon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706712/ https://www.ncbi.nlm.nih.gov/pubmed/34945342 http://dx.doi.org/10.3390/mi12121493

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