Phase Change Ge-Rich Ge–Sb–Te/Sb(2)Te(3) Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb(2)Te(3) core-shell nanowires grown by metal-organic chemical vap...

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Detalles Bibliográficos
Autores principales: Kumar, Arun, Cecchini, Raimondo, Wiemer, Claudia, Mussi, Valentina, De Simone, Sara, Calarco, Raffaella, Scuderi, Mario, Nicotra, Giuseppe, Longo, Massimo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707013/
https://www.ncbi.nlm.nih.gov/pubmed/34947707
http://dx.doi.org/10.3390/nano11123358

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707013/
https://www.ncbi.nlm.nih.gov/pubmed/34947707
http://dx.doi.org/10.3390/nano11123358

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