Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction

Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charg...

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Detalles Bibliográficos
Autores principales: Lim, Jung Wook, Heo, Su Jae, Park, Min A., Kim, Jieun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707111/
https://www.ncbi.nlm.nih.gov/pubmed/34947105
http://dx.doi.org/10.3390/ma14247508

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707111/
https://www.ncbi.nlm.nih.gov/pubmed/34947105
http://dx.doi.org/10.3390/ma14247508

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