Cargando…

Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction

Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charg...

Descripción completa

Detalles Bibliográficos
Autores principales: Lim, Jung Wook, Heo, Su Jae, Park, Min A., Kim, Jieun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707111/
https://www.ncbi.nlm.nih.gov/pubmed/34947105
http://dx.doi.org/10.3390/ma14247508
_version_ 1784622357041643520
author Lim, Jung Wook
Heo, Su Jae
Park, Min A.
Kim, Jieun
author_facet Lim, Jung Wook
Heo, Su Jae
Park, Min A.
Kim, Jieun
author_sort Lim, Jung Wook
collection PubMed
description Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device’s excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future.
format Online
Article
Text
id pubmed-8707111
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-87071112021-12-25 Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction Lim, Jung Wook Heo, Su Jae Park, Min A. Kim, Jieun Materials (Basel) Article Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device’s excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future. MDPI 2021-12-07 /pmc/articles/PMC8707111/ /pubmed/34947105 http://dx.doi.org/10.3390/ma14247508 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lim, Jung Wook
Heo, Su Jae
Park, Min A.
Kim, Jieun
Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title_full Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title_fullStr Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title_full_unstemmed Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title_short Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
title_sort synaptic transistors exhibiting gate-pulse-driven, metal-semiconductor transition of conduction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707111/
https://www.ncbi.nlm.nih.gov/pubmed/34947105
http://dx.doi.org/10.3390/ma14247508
work_keys_str_mv AT limjungwook synaptictransistorsexhibitinggatepulsedrivenmetalsemiconductortransitionofconduction
AT heosujae synaptictransistorsexhibitinggatepulsedrivenmetalsemiconductortransitionofconduction
AT parkmina synaptictransistorsexhibitinggatepulsedrivenmetalsemiconductortransitionofconduction
AT kimjieun synaptictransistorsexhibitinggatepulsedrivenmetalsemiconductortransitionofconduction