Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications

Defect-induced phenomena in 2D materials has received increasing interest among researchers due to the novel properties correlated with precise modification of materials. We performed a study of the nonlinear saturable absorption of the boron-atom-vacancy defective hexagonal boron nitride (h-BN) thi...

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Detalles Bibliográficos
Autores principales: Cheng, Chen, Li, Ziqi, Dong, Ningning, Li, Rang, Wang, Jun, Chen, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707294/
https://www.ncbi.nlm.nih.gov/pubmed/34947552
http://dx.doi.org/10.3390/nano11123203

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707294/
https://www.ncbi.nlm.nih.gov/pubmed/34947552
http://dx.doi.org/10.3390/nano11123203

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