Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remar...

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Detalles Bibliográficos
Autores principales: Rashid, Muhammad Haroon, Koel, Ants, Rang, Toomas, Nasir, Nadeem, Mehmood, Haris, Cheema, Salman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707511/
https://www.ncbi.nlm.nih.gov/pubmed/34945347
http://dx.doi.org/10.3390/mi12121499

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707511/
https://www.ncbi.nlm.nih.gov/pubmed/34945347
http://dx.doi.org/10.3390/mi12121499

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