The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl(2)-Based Plasma for Integrated Optics Applications

Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl(2)-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching process low-volatilit...

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Detalles Bibliográficos
Autores principales: Ishutkin, Sergey, Arykov, Vadim, Yunusov, Igor, Stepanenko, Mikhail, Smirnov, Vyacheslav, Troyan, Pavel, Zhidik, Yury
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707543/
https://www.ncbi.nlm.nih.gov/pubmed/34945385
http://dx.doi.org/10.3390/mi12121535

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707543/
https://www.ncbi.nlm.nih.gov/pubmed/34945385
http://dx.doi.org/10.3390/mi12121535

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