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The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl(2)-Based Plasma for Integrated Optics Applications
Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl(2)-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching process low-volatilit...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707543/ https://www.ncbi.nlm.nih.gov/pubmed/34945385 http://dx.doi.org/10.3390/mi12121535 |