Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure

InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components for the next-generation solid-state lighting industry. In this work, we introduce additional InGaN/GaN pre-wells in LED structure and investigate the influence on optoelectronic properties of yellow (~575 nm) LEDs....

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Detalles Bibliográficos
Autores principales: Zhao, Xiaoyu, Wan, Zehong, Gong, Liyan, Tao, Guoyi, Zhou, Shengjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707778/
https://www.ncbi.nlm.nih.gov/pubmed/34947580
http://dx.doi.org/10.3390/nano11123231

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707778/
https://www.ncbi.nlm.nih.gov/pubmed/34947580
http://dx.doi.org/10.3390/nano11123231

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