Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p(+)-Al(0.55)Ga(0.45)N/AlGaN/n(+)-Al(0.55)Ga(0.45)N polarization tunnel junctions (PTJs) were modeled to promote carrier tunneling, suppress current crowding, avoid optical absorption...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Yong, Zhang, Zihui, Guo, Long, Chen, Yuxuan, Li, Yahui, Qi, Zhanbin, Ben, Jianwei, Sun, Xiaojuan, Li, Dabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707888/
https://www.ncbi.nlm.nih.gov/pubmed/34947677
http://dx.doi.org/10.3390/nano11123328

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707888/
https://www.ncbi.nlm.nih.gov/pubmed/34947677
http://dx.doi.org/10.3390/nano11123328

Ejemplares similares