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Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8708440/ https://www.ncbi.nlm.nih.gov/pubmed/34945331 http://dx.doi.org/10.3390/mi12121481 |
Sumario: | A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m(2) is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V. |
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