Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO(x) Passivation Layers

We investigated the electrical performance and positive bias stress (PBS) stability of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with SiO(x) passivation layers after the post-annealing treatments in different atmospheres (air, N(2), O(2) and vacuum). Both the chamber atmospheres and...

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Detalles Bibliográficos
Autores principales: Zhang, Wen, Fan, Zenghui, Shen, Ao, Dong, Chengyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8708928/
https://www.ncbi.nlm.nih.gov/pubmed/34945401
http://dx.doi.org/10.3390/mi12121551

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8708928/
https://www.ncbi.nlm.nih.gov/pubmed/34945401
http://dx.doi.org/10.3390/mi12121551

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