Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which...

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Detalles Bibliográficos
Autores principales: Zhang, Yadong, Sun, Xiaoting, Jia, Kunpeng, Yin, Huaxiang, Luo, Kun, Yu, Jiahan, Wu, Zhenhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709045/
https://www.ncbi.nlm.nih.gov/pubmed/34947659
http://dx.doi.org/10.3390/nano11123311

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709045/
https://www.ncbi.nlm.nih.gov/pubmed/34947659
http://dx.doi.org/10.3390/nano11123311

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