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Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which...

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Autores principales: Zhang, Yadong, Sun, Xiaoting, Jia, Kunpeng, Yin, Huaxiang, Luo, Kun, Yu, Jiahan, Wu, Zhenhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709045/
https://www.ncbi.nlm.nih.gov/pubmed/34947659
http://dx.doi.org/10.3390/nano11123311
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author Zhang, Yadong
Sun, Xiaoting
Jia, Kunpeng
Yin, Huaxiang
Luo, Kun
Yu, Jiahan
Wu, Zhenhua
author_facet Zhang, Yadong
Sun, Xiaoting
Jia, Kunpeng
Yin, Huaxiang
Luo, Kun
Yu, Jiahan
Wu, Zhenhua
author_sort Zhang, Yadong
collection PubMed
description The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. The residual photoresist in lithography can cause unwanted doping to the material and reduce the performance of the device. To avoid contamination, a high-performance InSe FET is achieved by a using hard shadow mask instead of the lithography process. The high-quality channel surface is manifested by the hysteresis of the transfer characteristic curve. The hysteresis of InSe FET is less than 0.1 V at V(d) of 0.2, 0.5, and 1 V. And a high on/off ratio of 1.25 × 10(8) is achieved, as well relative high I(on) of 1.98 × 10(−4) A and low SS of 70.4 mV/dec at V(d) = 1 V are obtained, demonstrating the potential for InSe high-performance logic device.
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spelling pubmed-87090452021-12-25 Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment Zhang, Yadong Sun, Xiaoting Jia, Kunpeng Yin, Huaxiang Luo, Kun Yu, Jiahan Wu, Zhenhua Nanomaterials (Basel) Article The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. The residual photoresist in lithography can cause unwanted doping to the material and reduce the performance of the device. To avoid contamination, a high-performance InSe FET is achieved by a using hard shadow mask instead of the lithography process. The high-quality channel surface is manifested by the hysteresis of the transfer characteristic curve. The hysteresis of InSe FET is less than 0.1 V at V(d) of 0.2, 0.5, and 1 V. And a high on/off ratio of 1.25 × 10(8) is achieved, as well relative high I(on) of 1.98 × 10(−4) A and low SS of 70.4 mV/dec at V(d) = 1 V are obtained, demonstrating the potential for InSe high-performance logic device. MDPI 2021-12-06 /pmc/articles/PMC8709045/ /pubmed/34947659 http://dx.doi.org/10.3390/nano11123311 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Yadong
Sun, Xiaoting
Jia, Kunpeng
Yin, Huaxiang
Luo, Kun
Yu, Jiahan
Wu, Zhenhua
Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title_full Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title_fullStr Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title_full_unstemmed Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title_short Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
title_sort enhancement of inse field-effect-transistor performance against degradation of inse film in air environment
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709045/
https://www.ncbi.nlm.nih.gov/pubmed/34947659
http://dx.doi.org/10.3390/nano11123311
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