Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal coverage of the GaN substrate was demonstrated by mo...

Descripción completa

Detalles Bibliográficos
Autores principales: Schilirò, Emanuela, Giannazzo, Filippo, Di Franco, Salvatore, Greco, Giuseppe, Fiorenza, Patrick, Roccaforte, Fabrizio, Prystawko, Paweł, Kruszewski, Piotr, Leszczynski, Mike, Cora, Ildiko, Pécz, Béla, Fogarassy, Zsolt, Lo Nigro, Raffaella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709117/
https://www.ncbi.nlm.nih.gov/pubmed/34947665
http://dx.doi.org/10.3390/nano11123316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709117/
https://www.ncbi.nlm.nih.gov/pubmed/34947665
http://dx.doi.org/10.3390/nano11123316

Ejemplares similares