Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO(2) Gate Dielectric

AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO(2) have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO(2) gate dielectric, however, is kn...

Descripción completa

Detalles Bibliográficos
Autores principales: Yeom, Min Jae, Yang, Jeong Yong, Lee, Chan Ho, Heo, Junseok, Chung, Roy Byung Kyu, Yoo, Geonwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709384/
https://www.ncbi.nlm.nih.gov/pubmed/34945290
http://dx.doi.org/10.3390/mi12121441

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709384/
https://www.ncbi.nlm.nih.gov/pubmed/34945290
http://dx.doi.org/10.3390/mi12121441

Ejemplares similares