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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO(2) Gate Dielectric

AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO(2) have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO(2) gate dielectric, however, is kn...

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Detalles Bibliográficos
Autores principales:	Yeom, Min Jae, Yang, Jeong Yong, Lee, Chan Ho, Heo, Junseok, Chung, Roy Byung Kyu, Yoo, Geonwook
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709384/ https://www.ncbi.nlm.nih.gov/pubmed/34945290 http://dx.doi.org/10.3390/mi12121441

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