Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

[Image: see text] Thin vertical nanowires based on III–V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as...

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Detalles Bibliográficos
Autores principales: Jönsson, Adam, Svensson, Johannes, Fiordaliso, Elisabetta Maria, Lind, Erik, Hellenbrand, Markus, Wernersson, Lars-Erik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8717821/
https://www.ncbi.nlm.nih.gov/pubmed/34988463
http://dx.doi.org/10.1021/acsaelm.1c00729

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8717821/
https://www.ncbi.nlm.nih.gov/pubmed/34988463
http://dx.doi.org/10.1021/acsaelm.1c00729

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