A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-R...

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Detalles Bibliográficos
Autores principales: Racka-Szmidt, Katarzyna, Stonio, Bartłomiej, Żelazko, Jarosław, Filipiak, Maciej, Sochacki, Mariusz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8745874/
https://www.ncbi.nlm.nih.gov/pubmed/35009277
http://dx.doi.org/10.3390/ma15010123

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8745874/
https://www.ncbi.nlm.nih.gov/pubmed/35009277
http://dx.doi.org/10.3390/ma15010123

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