Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

In this work, Al(0.83)In(0.17)N/GaN/Al(0.18)Ga(0.82)N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electr...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Hsin-Ying, Ju, Ying-Hao, Chyi, Jen-Inn, Lee, Ching-Ting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746043/
https://www.ncbi.nlm.nih.gov/pubmed/35009193
http://dx.doi.org/10.3390/ma15010042

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746043/
https://www.ncbi.nlm.nih.gov/pubmed/35009193
http://dx.doi.org/10.3390/ma15010042

Ejemplares similares