Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM stru...

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Detalles Bibliográficos
Autores principales: Kocher, Matthias, Rommel, Mathias, Michałowski, Paweł Piotr, Erlbacher, Tobias
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746140/
https://www.ncbi.nlm.nih.gov/pubmed/35009196
http://dx.doi.org/10.3390/ma15010050

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746140/
https://www.ncbi.nlm.nih.gov/pubmed/35009196
http://dx.doi.org/10.3390/ma15010050

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