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Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM stru...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746140/ https://www.ncbi.nlm.nih.gov/pubmed/35009196 http://dx.doi.org/10.3390/ma15010050 |