Graphene Growth Directly on SiO(2)/Si by Hot Filament Chemical Vapor Deposition

We report the first direct synthesis of graphene on SiO(2)/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin c...

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Detalles Bibliográficos
Autores principales: Rodríguez-Villanueva, Sandra, Mendoza, Frank, Instan, Alvaro A., Katiyar, Ram S., Weiner, Brad R., Morell, Gerardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746613/
https://www.ncbi.nlm.nih.gov/pubmed/35010059
http://dx.doi.org/10.3390/nano12010109

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746613/
https://www.ncbi.nlm.nih.gov/pubmed/35010059
http://dx.doi.org/10.3390/nano12010109

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