GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric di...

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Detalles Bibliográficos
Autores principales: Chen, Wen, Feng, Meixin, Tang, Yongjun, Wang, Jian, Liu, Jianxun, Sun, Qian, Gao, Xumin, Wang, Yongjin, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746822/
https://www.ncbi.nlm.nih.gov/pubmed/35010084
http://dx.doi.org/10.3390/nano12010134

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746822/
https://www.ncbi.nlm.nih.gov/pubmed/35010084
http://dx.doi.org/10.3390/nano12010134

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