Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielec...

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Detalles Bibliográficos
Autores principales: Pavlenko, Maksim A., Tikhonov, Yuri A., Razumnaya, Anna G., Vinokur, Valerii M., Lukyanchuk, Igor A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8747052/
https://www.ncbi.nlm.nih.gov/pubmed/35010024
http://dx.doi.org/10.3390/nano12010075

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8747052/
https://www.ncbi.nlm.nih.gov/pubmed/35010024
http://dx.doi.org/10.3390/nano12010075

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