Low-Temperature Annealing of CdZnTeSe under Bias

We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control...

Descripción completa

Detalles Bibliográficos
Autores principales: Rejhon, Martin, Dedic, Vaclav, Grill, Roman, Franc, Jan, Roy, Utpal N., James, Ralph B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8747470/
https://www.ncbi.nlm.nih.gov/pubmed/35009714
http://dx.doi.org/10.3390/s22010171

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8747470/
https://www.ncbi.nlm.nih.gov/pubmed/35009714
http://dx.doi.org/10.3390/s22010171

Ejemplares similares