Ultra-low threshold lasing through phase front engineering via a metallic circular aperture

Semiconductor lasers with extremely low threshold power require a combination of small volume active region with high-quality-factor cavities. For ridge lasers with highly reflective coatings, an ultra-low threshold demands significantly suppressing the diffraction loss at the facets of the laser. H...

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Detalles Bibliográficos
Autores principales: Wang, Zhixin, Kapsalidis, Filippos, Wang, Ruijun, Beck, Mattias, Faist, Jérôme
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8752788/
https://www.ncbi.nlm.nih.gov/pubmed/35017524
http://dx.doi.org/10.1038/s41467-021-27927-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8752788/
https://www.ncbi.nlm.nih.gov/pubmed/35017524
http://dx.doi.org/10.1038/s41467-021-27927-9

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