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Ultra-low threshold lasing through phase front engineering via a metallic circular aperture
Semiconductor lasers with extremely low threshold power require a combination of small volume active region with high-quality-factor cavities. For ridge lasers with highly reflective coatings, an ultra-low threshold demands significantly suppressing the diffraction loss at the facets of the laser. H...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8752788/ https://www.ncbi.nlm.nih.gov/pubmed/35017524 http://dx.doi.org/10.1038/s41467-021-27927-9 |