Natural Boron and (10)B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

[Image: see text] Metal–semiconductor–metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride (h-BN) layer with both natural and (10)B-enriched boron. Current–voltage (I–V) and current–time (I–t) curves of the fabric...

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Detalles Bibliográficos
Autores principales: Mballo, Adama, Ahaitouf, Ali, Sundaram, Suresh, Srivastava, Ashutosh, Ottapilakkal, Vishnu, Gujrati, Rajat, Vuong, Phuong, Karrakchou, Soufiane, Kumar, Mritunjay, Li, Xiaohang, Halfaya, Yacine, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8757347/
https://www.ncbi.nlm.nih.gov/pubmed/35036747
http://dx.doi.org/10.1021/acsomega.1c05458

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8757347/
https://www.ncbi.nlm.nih.gov/pubmed/35036747
http://dx.doi.org/10.1021/acsomega.1c05458

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