Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in t...

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Detalles Bibliográficos
Autores principales: Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8758732/
https://www.ncbi.nlm.nih.gov/pubmed/35027582
http://dx.doi.org/10.1038/s41598-021-04170-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8758732/
https://www.ncbi.nlm.nih.gov/pubmed/35027582
http://dx.doi.org/10.1038/s41598-021-04170-2

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