Cargando…
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in t...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8758732/ https://www.ncbi.nlm.nih.gov/pubmed/35027582 http://dx.doi.org/10.1038/s41598-021-04170-2 |