Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements. The photoluminescence data is modelled using a localised state profile consisting of two Gaussians. Good agreement with t...

Descripción completa

Detalles Bibliográficos
Autores principales: Bailey, N. J., Rockett, T. B. O., Flores, S., Reyes, D. F., David, J. P. R., Richards, R. D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8763887/
https://www.ncbi.nlm.nih.gov/pubmed/35039503
http://dx.doi.org/10.1038/s41598-021-04477-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8763887/
https://www.ncbi.nlm.nih.gov/pubmed/35039503
http://dx.doi.org/10.1038/s41598-021-04477-0

Ejemplares similares