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Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements. The photoluminescence data is modelled using a localised state profile consisting of two Gaussians. Good agreement with t...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8763887/ https://www.ncbi.nlm.nih.gov/pubmed/35039503 http://dx.doi.org/10.1038/s41598-021-04477-0 |