Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs

Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. Large lattice mismatch Ge/Si multilayers were intentionally grown as the starting material rather than Ge/GeSi multilayers to acquire the benefits of the considerable difference i...

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Detalles Bibliográficos
Autores principales: Chu, Chun-Lin, Chang, Jen-Yi, Chen, Po-Yen, Wang, Po-Yu, Hsu, Shu-Han, Chou, Dean
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8770505/
https://www.ncbi.nlm.nih.gov/pubmed/35046452
http://dx.doi.org/10.1038/s41598-021-04514-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8770505/
https://www.ncbi.nlm.nih.gov/pubmed/35046452
http://dx.doi.org/10.1038/s41598-021-04514-y

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